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HL6553FG
Visible High Power Laser Diode
Description
The HL6553FG is a 0.65 m band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for measurement, and various other types of optical equipment. ODE-208-016C (Z) Rev.3 Aug. 29, 2006
Features
* Optical output power : 120 mW CW operation * Single longitudinal mode. * Visible light output : p = 660 nm Typ
Package Type * HL6553FG
Internal Circuit
1 2 (Flange)
LD
3
PD
4
Absolute Maximum Ratings
(TC = 25C)
Item Optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO VR(LD) VR(PD) Topr Tstg Ratings 130 2 30 -10 to +60 -40 to +85 Unit mW V V C C
Optical and Electrical Characteristics
(TC = 25C)
Item Threshold current Operating current Operating voltage Lasing wavelength Beam divergence parallel to the junction Beam divergence perpendicular to the junction Monitor current Symbol Ith IOP VOP p // Is Min -- -- -- 654 7 15 0.4 Typ 55 175 2.6 660 10 17 0.8 Max 70 210 3.0 665 13 20 1.6 Unit mA mA V nm mA Test Conditions -- PO = 120 mW PO = 120 mW PO = 120 mW PO = 120 mW PO = 120 mW PO = 120 mW, VR(PD) = 5V
Rev.3 Aug. 29, 2006 page 1 of 4
HL6553FG
Typical Characteristic Curves
Optical Output Power vs. Forward Current 140 TC = 25C 120 100 80 60 40 20 0 0 50 100 150 200 250 300 TC = 60C TC = 0C Threshold Current vs. Case Temperature 100
Optical output power, PO (mW)
Threshold current, Ith (mA)
50
10
0
10
20 30 40
50 60
70 80
Forward current, IF (mA)
Case temperature, TC (C)
Slope Efficiency vs. Case Temperature 1.2
Monitor Current vs. Case Temperature 1.0 PO = 120 mW VR(PD) = 5 V
Slope efficiency, S (mW/mA)
Monitor current, IS (mA)
0 10 20 30 40 50 60 70 80
1.0 0.8 0.6 0.4 0.2 0
0.8
0.6
0.4
0 0 10 20 30 40
50
60
70 80
Case temperature, TC (C)
Case temperature, TC (C)
Wavelength vs. Case Temperature 680 1.0 PO = 120mW 675 670 665 660 655 650 645 640 0 20 40 60 80 100 0.8
Far Feild Pattern PO = 120mW TC = 25C
Lasing Wavelength, p (nm)
Relative intensity
Perpendicular 0.6 0.4 0.2 0 -40 -30 -20 -10 0 Parallel
10 20 30 40
Case temperature, TC (C)
Angle, ( )
Rev.3 Aug. 29, 2006 page 2 of 4
HL6553FG
Package Dimensions
As of June, 2005
Unit: mm
9.0 +0 -0.025 1.0 0.1
(0.65)
(90) 3.5 0.2 0.3
Glass
7.2 +0.3 -0.2 6.2 0.2 (2.0)
Emitting Point
0.4 +0.1 -0
3 - 0.45 0.1 1 2 4 3
4 1 3
2
2.54 0.35
OPJ Code JEDEC JEITA Mass (reference value)
(1.8)
1.5 0.1
91
2.45
LD/FG -- -- 1.1 g
Rev.3 Aug. 29, 2006 page 3 of 4
HL6553FG
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ (c)2007 Opnext Japan, Inc., All rights reserved. Printed in Japan.
Colophon 2.0
Rev.3 Aug. 29, 2006 page 4 of 4

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